Prof. Hong-Bo Sun and Dr. Xian-Bin Li guided a research on defect physics toward future nanoelectronics in novel two-dimension semiconductors, which is highlighted in Chinese Science Bulletin 60(19), 1853 (2015). Their recent publication of ‘’Determination of formation and ionization energies of charged defects in two dimensional materials” [Phys. Rev. Lett. 114, 196801 (2015)], introduces the discoveries. Doctoral student Dan Wang (D3) contributes mainly to the research.
See details in http://csb.scichina.com:8080/CN/abstract/abstract518082.shtml .