LaSuN --- Hong-bo Sun's homepage
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  • Name:
    Xian-Bin Li
  • Position:
    Associate Professor
  • Email:
    lixianbin@jlu.edu.cn
  • Telephone:
    +86 431 85168220
  • Address:
    Tang Aoqing Building, D203
Details

Biosketch:

2010.07 To Present: Lecturer, College of Electronic Science and Engineering, Jilin University, under Prof. Hong-Bo Sun;

2007.09 To 2010.06: Ph.D., College of Electronic Science and Engineering, Jilin University, Research on Semiconductor Physics under Prof. Hong-Bo Sun and Prof. S.B. Zhang (RPI,US);

2005.09 To 2007.06: M.Sc., College of Electronic Science and Engineering, Jilin University, Research on Organic Transistor under Prof. Yi Zhao; 

2001.09 To 2005.06: B.Sc., College of Electronic Science and Engineering, Jilin University, Study on Microelectronics;

 

Research Area:

 

Now I mainly focus on the key problems in microelectronics and optoelectronics with the first-principles calculation. These topics include (1) doping and defect physics in wide band-gap semiconductor, such as ZnO and SiO2; (2) phase change storage of Ge-Sb-Te alloys including the mechanism of memory and the design of other new storage material; (3) low-dimension semiconductor physics, for example ZnO surface and graphene/graphene oxide. 

 

Selected Publications:

1. M. Zhu, M. J. Xia, F. Rao, Xian-Bin Li (Co-corresponding Author), L. C. Wu, X. L. Ji, S. L. Lv, Z. T. Song, S. L. Feng, Hong-Bo Sun, and S. B. Zhang, ”One Order of Magnitude Faster Phase Change at Reduced Power in Ti-Sb-Te”, Nature Communication 5, 4086 (2014). 

 

2. X. Q. Liu, Xian-Bin Li, L. Zhang, Y.Q. Cheng, Z.G. Yan, M. Xu, X. D. Han, S.B. Zhang, Z. Zhang, and E. Ma, Reply to the Comments on the Work "New Structural Picture of the Ge2Sb2Te5 Phase-Change Alloy", Phys. Rev. Lett. 108, 239602 (2012).

 

3. Xian-Bin Li, X. Q. Liu, Xin Liu, Dong Han, Z. Zhang, X. D. Han, Hong-Bo Sun, and S. B. Zhang, “Role of Electronic Excitation in the Amorphization of Ge-Sb-Te Alloys”, Phys. Rev. Lett. 107, 015501 (2011).

 

4. X.Q. Liu, Xian-Bin Li, L. Zhang, Y. Q. Cheng, Z. G. Yan, M. Xu, X. D. Han, S. B. Zhang, Z. Zhang, and E. Ma, “New Structural Picture of the Ge2Sb2Te5 Phase-Change Alloy”, Phys. Rev. Lett. 106, 025501 (2011).

 

5. L. F. Li, Y. L. Wang, S. Y. Xie, Xian-Bin Li, Y. Q. Wang, R. T. Wu, Hong-Bo Sun, S. B. Zhang, and H. J. Gao, “Two-Dimensional Transition Metal Honeycomb Realized: Hf on Ir(111)”, Nano Lett. 13, 4671 (2013). (Highlight in Nature Nanotechnology and Nature China)

 

6. Y. H. Yue, N. K. Chen, Xian-Bin Li, S. B. Zhang, Z. Zhang, M. W. Chen, and X. D. Han, “Crystalline Liquid and Rubber-Like Behavior in Cu Nanowires” Nano Lett. 13, 3812 (2013).

 

7. S. Y. Xie, Xian-Bin Li (Corresponding Author), W. Q. Tian, N. K. Chen, X. L. Zhang, Y. L. Wang, S. B. Zhang, and Hong-Bo Sun, “First-Principles Calculations of a Robust Two-Dimensional Boron Honeycomb Sandwiching a Triangular Molybdenum Layer”, Phys. Rev. B 90, 035447 (2014).

 

8. D. Han, Y. Y. Sun, J. Bang, Y. Y. Zhang, Hong-Bo Sun, Xian-Bin Li, and S. B. Zhang, “Deep Electron Traps and Origin of p-Type Conductivity in the Earth-Abundant Solar-Cell Material Cu2ZnSnS4”, Phys. Rev. B 87, 155206 (2013).

 

9. Dong Han, D. West, Xian-Bin Li, Sheng-Yi Xie, Hong-Bo Sun and S.B. Zhang, “Impurity Doping in SiO2: A First-Principles Study” Phys. Rev. B 82, 155132 (2010).

 

10. Xian-Bin Li, S. Limpijunong, W.Q. Tian, Hong-Bo Sun, and S.B. Zhang, “Hydrogen in ZnO Revisited: Bond Center versus Antibonding Site” Phys. Rev. B 78, 113203 (2008).

 

11. S. Y. Xie, Xian-Bin Li (Corresponding Author), Y. Y. Sun, Y. L. Zhang, D. Han, W. Q. Tian, W. Q. Wang, Y. S. Zheng, S. B. Zhang, and Hong-Bo Sun, “Theoretical Characterization of Reduction Dynamics for Graphene Oxide by Alkaline-Earth Metals” Carbon 52, 122 (2013).

 

12. Xian-Bin Li, X. Q. Liu, X. D. Han, and S. B. Zhang, “Role of Electronic Excitation in Phase-Change Memory Materials: A Brief Review” Phys. Status Solidi B, 249, 1861 (2012). (Invited Review Dedicated to Sir Stanford R. Ovshinsky, the Discoverer of Phase-Change Memory Phenomenon).

 

 

13. Xian-Bin Li, Sheng-Yi Xie, Hui Zheng, Wei Quan Tian and Hong-Bo Sun, Boron based two-dimensional crystals: theoretical design, realization proposal and applications, Nanoscale 7, 18863 (2015).

 

14. Hui Zheng, Xian-Bin Li, Nian-Ke Chen, Sheng-Yi Xie, Wei Quan Tian, Yuanping Chen, Hong Xia, S. B. Zhang, and Hong-Bo Sun. Monolayer II-VI semiconductors: A first-principles prediction, Phys. Rev. B 92, 115307 (2015).

 

15. Dan Wang, Dong Han, Xian-Bin Li, Sheng-Yi Xie, Nian-Ke Chen, W. Q. Tian, Damien West, Hong-Bo Sun and S. B. Zhang, Determination of formation and ionization energies of charged defects in two-dimensional materials, Phys. Rev. Lett.114, 196801, (2015).

 

16. Nian-Ke Chen, Xian-Bin Li, Xue-Peng Wang, Meng-Jiao Xia, Sheng-Yi Xie, Hai-Yu Wang, Zhitang Song, Shengbai Zhang and Hong-Bo Sun, Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization, Acta Mater. 90, 88 (2015).

 

17.Sheng-Yi Xie, Xian-Bin Li, Wei Quan Tian, Nian-Ke Chen, Yeliang Wang, Shengbai Zhang, and Hong-Bo Sun, Novel two-dimensional MgB6 crystal: metal-layer stabilized boron kagome lattice,  Phys. Chem. Chem. Phys. 17, 1093 (2015).